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Along with the Photo Transistor and Sensor, A separate receiving and emitting element will be produced. The chip package of the Photo Transistor’s size is 3.0 X 1.5 X 1.4 mm which is extremely small and suitable for most practical applications.
- Sensitivity
- Super thin package : Photo TR of chip package form
- Various forms of sensor production
- Printer
- Timer sensor
- Vending machine
- Platform sensor
- Parking ticket machine
Photo Transistor 
| Part No. | Id[㎂] | IL[mA] | λp[nm | λp[nm] | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Max | VCEO[V] | Typ | VCE[V] | EV[lux] | Typ | VCC[V] | IC[mA] | RL[Ω] | Typ | VCEO[V] | EV[lux] | |
| SST-4T5 | 0.1 | 10 | 7 | 5 | 2000 | 10/10 | 5 | 1 | 100 | 880 | 5 | 2000 |
| PTR202-IX0 | 100 | 5 | 2.5 | 10 | 1000 | 10/10 | 5 | 1 | 1000 | 800 | 5 | 1000 |
Photo Transistor
| Part No. | Parameter | Symbol | Condition | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|---|
| SPS8T | Emitter | Forward Voltage | VF | IF=20mA | - | 1.3 | 1.5 | V |
| Reverse Current | IR | VR=5V | - | 0.01 | 10 | ㎂ | ||
| Peak Emission Wavelength | IP | IF=20mA | - | 940 | - | nm | ||
| Detector | Light Current | IL | VCE=10V | 0.5 | - | - | mA | |
| IF=20mA | ||||||||
| Collector Dark Current | ICEO | VCE=10V | - | - | 0.2 | ㎂ | ||
| C-E Saturation Voltage | VCE(SAT) | IC=0.1mA | - | 0.1 | 0.4 | V | ||
| IF=20mA | ||||||||
| Peak Sensitivity Wavelength | λP | - | - | 800 | - | nm | ||
| Response Time | Rise Time | tr | VCE=5V | - | 5 | - | ㎲ | |
| IL=2mA | ||||||||
| Fall Time | tf | RL=100W | - | 6 | - | ㎲ | ||
InfraredLED 
| Part No. | Color | Forward voltage VF[V] | Power Po[mW/Sr] | Peak sensitivity Wavelenth λp[nm] | ||||
|---|---|---|---|---|---|---|---|---|
| Typ | Max | IF[[mA] | Typ | IF[[mA] | Typ | IF[[mA] | ||
| SIR-94T530 | IR | 1.3 | 1.6 | 40 | 5 | 20 | 940 | 60 |
